Invention Grant
- Patent Title: Passivation layer having opening for under bump metallurgy
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Application No.: US15966723Application Date: 2018-04-30
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Publication No.: US10347556B2Publication Date: 2019-07-09
- Inventor: Han Ul Lee , Jin Su Kim , Young Gwan Ko
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: Morgan Lewis & Bockius LLP
- Priority: KR10-2017-0085042 20170704
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44 ; H01L23/31 ; H01L25/18 ; H01L23/538 ; H01L23/00 ; H01L21/56 ; H01L21/48 ; H01L21/683 ; H01L21/3105 ; H01L23/498 ; H01L25/065

Abstract:
A semiconductor device includes: a chip having an active surface having connection pads disposed thereon; an encapsulant encapsulating at least portions of the chip; a connection member disposed on the active surface of the chip and including a redistribution layer electrically connected to the connection pads; a passivation layer disposed on the connection member; and an under bump metallurgy (UBM) layer at least partially embedded in the passivation layer and electrically connected to the redistribution layer of the connection member. The UBM layer includes a UBM pad partially embedded in the passivation layer and a UVM via penetrating through a portion of the passivation layer and electrically connecting the redistribution layer of the connection member and the UBM pad to each other. A portion of a side surface of the UBM pad is exposed through an opening formed in the passivation layer and the opening surrounds the UBM pad.
Public/Granted literature
- US20190013256A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-01-10
Information query
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