Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer

Invention Grant

US10347564B2 Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer 有权

Patent Title: Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer
Application No.: US15615924

Application Date: 2017-06-07
Publication No.: US10347564B2

Publication Date: 2019-07-09
Inventor: Matthieu Lagouge , Qing Zhang , Mohommad Choudhuri , Gul Zeb
Applicant: NXP USA, Inc.
Applicant Address: US TX Austin
Assignee: NXP USA, Inc.
Current Assignee: NXP USA, Inc.
Current Assignee Address: US TX Austin
Main IPC: H01L23/48
IPC: H01L23/48 ; H01L23/52 ; H01L21/768 ; H01L21/3213 ; H01L21/288 ; H01L21/3065 ; H01L23/532

Abstract:

A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置