Invention Grant
- Patent Title: Semiconductor component comprising copper metallizations
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Application No.: US14287124Application Date: 2014-05-26
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Publication No.: US10347580B2Publication Date: 2019-07-09
- Inventor: Matthias Stecher
- Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102007046556 20070928
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/00 ; H01L23/528 ; H01L23/522 ; H01L29/78
Abstract:
A semiconductor component having improved thermomechanical durability has in a semiconductor substrate at least one cell comprising a first main electrode zone, a second main electrode zone and a control electrode zone lying in between. For making contact with the main electrode zone, at least one metallization layer composed of copper or a copper alloy is provided which is connected to at least one bonding electrode which likewise comprises copper or a copper alloy.
Public/Granted literature
- US20140252627A1 SEMICONDUCTOR COMPONENT COMPRISING COPPER METALLIZATIONS Public/Granted day:2014-09-11
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