Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
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Application No.: US15841355Application Date: 2017-12-14
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Publication No.: US10347593B2Publication Date: 2019-07-09
- Inventor: Tetsuo Yamashita , Tomohiro Hieda , Masaomi Miyazawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2017-081446 20170417
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L21/52 ; H01L23/045 ; H01L23/10 ; H01L23/053

Abstract:
According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.
Public/Granted literature
- US20180301421A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2018-10-18
Information query
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