Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15900919Application Date: 2018-02-21
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Publication No.: US10347604B2Publication Date: 2019-07-09
- Inventor: Yuki Yagyu , Seiya Isozaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-061806 20170327
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/00 ; H01L29/792 ; H01L27/11517
Abstract:
To provide a semiconductor device having improved reliability. A method of manufacturing the semiconductor device includes connecting a wire comprised of copper with a conductive layer formed on the pad electrode of a semiconductor chip, heat treating the semiconductor chip, and then sealing the semiconductor chip and the wire with a resin.
Public/Granted literature
- US20180277511A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-09-27
Information query
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