Invention Grant
- Patent Title: Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor
-
Application No.: US15800803Application Date: 2017-11-01
-
Publication No.: US10347624B2Publication Date: 2019-07-09
- Inventor: Brent A. Anderson , Alain Loiseau
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/06 ; H01L29/78 ; H01L29/10 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L21/84 ; H01L27/12
Abstract:
An electrical device that in some embodiments includes a substrate including a lateral device region and a vertical device region. A lateral diffusion metal oxide semiconductor (LDMOS) device may be present in the lateral device region, wherein a drift region of the LDMOS device has a length that is parallel to an upper surface of the substrate in which the LDMOS device is formed. A vertical field effect transistor (VFET) device may be present in the vertical device region, wherein a vertical channel of the VFET has a length that is perpendicular to said upper surface of the substrate, the VFET including a gate structure that is positioned around the vertical channel.
Public/Granted literature
- US20180082998A1 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE INTEGRATED WITH VERTICAL FIELD EFFECT TRANSISTOR Public/Granted day:2018-03-22
Information query
IPC分类:
