A semiconductor memory device includes a substrate, electrode films provided on a first direction side of the substrate and arranged with spacing from each other along the first direction, semiconductor members extending in the first direction, a charge storage member provided between each of the electrode films and each of the semiconductor members, and a control circuit. Memory cells are formed in crossing portions of the electrode films and the semiconductor members. The control circuit classifies the memory cells into a first group and a second group. The control circuit performs writing, reading, and erasing of n-value data (n being an integer of two or more) on the memory cell of the first group. The control circuit performs writing, reading, and erasing of m-value data (m being an integer larger than n) on the memory cell of the second group.