Invention Grant
- Patent Title: Semiconductor circuit including nanosheets and fins on the same wafer
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Application No.: US15868683Application Date: 2018-01-11
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Publication No.: US10347657B1Publication Date: 2019-07-09
- Inventor: Effendi Leobandung
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84 ; H01L29/06 ; H01L29/78
Abstract:
A complimentary metal-oxide-semiconductor (CMOS) device includes a wafer having a bulk semiconductor layer. A fin-type semiconductor device is formed on a first portion of the wafer. The CMOS devices also includes a nanosheet semiconductor device formed on a second portion of the wafer different from the first portion.
Public/Granted literature
- US20190214409A1 SEMICONDUCTOR CIRCUIT INCLUDING NANOSHEETS AND FINS ON THE SAME WAFER Public/Granted day:2019-07-11
Information query
IPC分类:
