Invention Grant
- Patent Title: Photodetection element
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Application No.: US15699888Application Date: 2017-09-08
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Publication No.: US10347670B2Publication Date: 2019-07-09
- Inventor: Keita Sasaki
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-050274 20170315
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/144 ; H01L31/107 ; H01L31/0216

Abstract:
A photodetection element according to an embodiment includes: a photodiode cell, the photodiode cell including: a semiconductor substrate; a first semiconductor layer disposed on the semiconductor substrate; a second semiconductor layer disposed in a region including an interface between the semiconductor substrate and the first semiconductor layer, the second semiconductor layer being of the same conductivity type as the semiconductor substrate; and a third semiconductor layer disposed in a surface region of the first semiconductor layer.
Public/Granted literature
- US20180269236A1 PHOTODETECTION ELEMENT Public/Granted day:2018-09-20
Information query
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