Invention Grant
- Patent Title: Shallow trench textured regions and associated methods
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Application No.: US15614256Application Date: 2017-06-05
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Publication No.: US10347682B2Publication Date: 2019-07-09
- Inventor: Homayoon Haddad , Jutao Jiang
- Applicant: SiOnyx, LLC
- Applicant Address: US MA Beverly
- Assignee: Sionyx, LLC
- Current Assignee: Sionyx, LLC
- Current Assignee Address: US MA Beverly
- Agency: Pepper Hamilton LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/028 ; H01L27/146 ; H01L31/18

Abstract:
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
Public/Granted literature
- US20170271394A1 SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS Public/Granted day:2017-09-21
Information query
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