Invention Grant
- Patent Title: Magnetic memory element with multilayered seed structure
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Application No.: US16101325Application Date: 2018-08-10
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Publication No.: US10347691B2Publication Date: 2019-07-09
- Inventor: Yiming Huai , Bing K. Yen , Huadong Gan
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Bing K. Yen
- Main IPC: H01L27/22
- IPC: H01L27/22 ; G11C11/16 ; H01L43/10 ; H01L43/08 ; H01L43/02

Abstract:
The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.
Public/Granted literature
- US20190006414A1 Magnetic Memory Element with Multilayered Seed Structure Public/Granted day:2019-01-03
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