A method for forming a thin film resistor (TFR) without via penetration and the resulting device are provided. Embodiments include forming a first ILD over a substrate; forming a second ILD over the first ILD; forming a first metal layer in the second ILD; forming a first nitride layer over the second ILD and the first metal layer; forming a third ILD over the first nitride layer; forming vias through the third ILD and the first nitride layer, coupled to the first metal layer; forming a TFR layer over two of the vias and the third ILD between the two vias; forming a second nitride layer over the TFR layer and the third ILD; forming a fourth ILD over the second nitride layer; and forming a second metal layer in the fourth ILD and the second nitride layer.