Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16002866Application Date: 2018-06-07
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Publication No.: US10347711B2Publication Date: 2019-07-09
- Inventor: Beom-Yong Kim , Deok-Sin Kil , Hee-Young Jeon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0160654 20171128
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L49/02 ; H01G4/12 ; H01G4/005

Abstract:
A method for fabricating a capacitor includes: forming a bottom electrode; forming a dielectric layer on the bottom electrode; forming a metal oxide layer including a metal having a high electronegativity on the dielectric layer; forming a sacrificial layer on the metal oxide layer to reduce the metal oxide layer to a metal layer; and forming a top electrode on the sacrificial layer to convert the reduced metal layer into a high work function interface layer.
Public/Granted literature
- US20190165087A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-05-30
Information query
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