Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having graphene material
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Application No.: US16188994Application Date: 2018-11-13
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Publication No.: US10347723B2Publication Date: 2019-07-09
- Inventor: Guenther Ruhl , Gunther Lippert , Hans-Joachim Schulze , Thomas Zimmer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016105610 20160324
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/16 ; H01L21/762 ; H01L21/78 ; H01L29/06 ; H01L21/683 ; H01L21/02 ; H01L21/56 ; H01L21/18 ; H01L29/165 ; H01L29/04 ; H01L21/265 ; H01L21/324

Abstract:
A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.
Public/Granted literature
- US20190081143A1 Method of Manufacturing a Semiconductor Device Having Graphene Material Public/Granted day:2019-03-14
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