A gate insulating film covers a trench penetrating through a source region and a body region and reaching a drift layer in each of a first cell region and a second cell region. The gate electrode is provided in the trench. A high-concentration layer of the first conductivity type is provided between the drift layer and the body region in the first cell region and has a second impurity concentration higher than the first impurity concentration. A current restriction layer is provided between the drift layer and the body region in the second cell region and has the first conductivity type and a third impurity concentration higher than the first impurity concentration and lower than the second impurity concentration.