Invention Grant
- Patent Title: Semiconductor device that facilitates a reduction in the occurrences of cracking in a semiconductor layer accompanying thermal stress
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Application No.: US14956977Application Date: 2015-12-02
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Publication No.: US10347725B2Publication Date: 2019-07-09
- Inventor: Akihiko Nobukuni , Hirofumi Oki , Yoshifumi Tomomatsu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-125832 20150623
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/417 ; H01L29/739 ; H01L29/74 ; H01L29/78 ; H01L29/06 ; H01L29/16 ; H01L29/20

Abstract:
An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.
Public/Granted literature
- US20160380068A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-29
Information query
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