A semiconductor device includes a semiconductor substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, a gate insulating film, and a gate electrode. The semiconductor device further includes, in a region of the first semiconductor layer across or adjacent to a p-n junction therein that does not overlap the second semiconductor region in a plan view except lateral edges thereof, a lifetime killer region having lifetime killers implanted therein.