Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a cyclic deposition-etch process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes reflowing the conformal film. The method includes forming a cap layer on the reflowed film. The method includes depositing a crystalline film on the cap layer. The method includes crystallizing the reflowed film and the cap layer after depositing the crystalline film.