Invention Grant
- Patent Title: Reducing bending in parallel structures in semiconductor fabrication
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Application No.: US15469237Application Date: 2017-03-24
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Publication No.: US10347749B2Publication Date: 2019-07-09
- Inventor: Balasubramanian S. Pranatharthiharan , Pietro Montanini , John R. Sporre , Ruilong Xie
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Garg Law Firm, PLLC
- Agent Rakesh Garg; Grant Johnson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762

Abstract:
A first layer of a first material is deposited on a first structure and a second structure, a surface of the first structure being disposed substantially parallelly to a surface of the second structure in at least one direction. A selectively removable material is deposited over the first layer and removed up to a height of a first step. The first material is removed from a portion of the first layer that is exposed from removing the selectively removable material up to the height of the first step. A remainder of the selectively removable material is removed to expose a second portion of the first layer, the second portion of the first layer forming the first step. A second layer of a second material is deposited on the first structure, the second structure, and the second portion of the first layer, causing a formation of a stepped structure.
Public/Granted literature
- US20180277663A1 REDUCING BENDING IN PARALLEL STRUCTURES IN SEMICONDUCTOR FABRICATION Public/Granted day:2018-09-27
Information query
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