Invention Grant
- Patent Title: Split fin field effect transistor enabling back bias on fin type field effect transistors
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Application No.: US15847169Application Date: 2017-12-19
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Publication No.: US10347765B2Publication Date: 2019-07-09
- Inventor: Veeraraghavan S. Basker , Zuoguang Liu , Xin Miao , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutujian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L21/308 ; H01L21/3205 ; H01L21/8234 ; H01L29/417 ; H01L29/08 ; H01L29/51 ; H01L21/311 ; H01L21/3065 ; H01L29/36
Abstract:
A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode.
Public/Granted literature
- US20180108772A1 SPLIT FIN FIELD EFFECT TRANSISTOR ENABLING BACK BIAS ON FIN TYPE FIELD EFFECT TRANSISTORS Public/Granted day:2018-04-19
Information query
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