Invention Grant
- Patent Title: Transistor with a subfin layer
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Application No.: US15570742Application Date: 2015-06-16
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Publication No.: US10347767B2Publication Date: 2019-07-09
- Inventor: Willy Rachmady , Matthew V. Metz , Van H. Le , Ravi Pillarisetty , Gilbert Dewey , Jack T. Kavalieros , Ashish Agrawal
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/036087 WO 20150616
- International Announcement: WO2016/204737 WO 20161222
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/02 ; H01L21/762 ; H01L29/06
Abstract:
A subfin layer is deposited in a trench in an insulating layer on the substrate. A fin is deposited on the subfin layer. The fin has a top portion and opposing sidewalls. The fin comprises a first semiconductor material. The subfin layer comprises a III-V semiconductor material.
Public/Granted literature
- US20180204947A1 A TRANSISTOR WITH A SUBFIN LAYER Public/Granted day:2018-07-19
Information query
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