Invention Grant
- Patent Title: Semiconductor device having insulating film including low-density region
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Application No.: US15872154Application Date: 2018-01-16
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Publication No.: US10347768B2Publication Date: 2019-07-09
- Inventor: Junichi Koezuka , Toshinari Sasaki , Katsuaki Tochibayashi , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-161688 20120720
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/786 ; H01L29/66 ; H01L27/12 ; H01L27/146 ; G02F1/133 ; G02F1/1333 ; G02F1/1339 ; G02F1/1343 ; G02F1/1368 ; G06F3/041 ; H01L27/32 ; G02F1/1362 ; H01L27/15
Abstract:
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
Public/Granted literature
- US20180158956A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-06-07
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