Invention Grant
- Patent Title: Electrode provided with UBM structure having a barrier layer for reducing solder diffusion into the electrode and a method for producing the same
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Application No.: US14630898Application Date: 2015-02-25
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Publication No.: US10347774B2Publication Date: 2019-07-09
- Inventor: Noriyuki Kishi , Tatsuhiro Koizumi , Hiroyuki Shiraki , Mitsuru Tamashiro , Masaya Yamamoto
- Applicant: Siemens Aktiengesellschaft
- Applicant Address: DE Munich
- Assignee: SIEMENS AKTIENGESELLSCHAFT
- Current Assignee: SIEMENS AKTIENGESELLSCHAFT
- Current Assignee Address: DE Munich
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2014-037000 20140227
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L31/02 ; H01L31/0296 ; H01L23/00 ; H01L31/0224 ; H01L27/146
Abstract:
A problem addressed by an embodiment of the present invention lies in providing a UBM structure which includes thin layers and can prevent diffusion of solder into an electrode. The UBM structure according to an embodiment of the present invention includes: a first UBM layer on an electrode, a second UBM layer on the first UBM layer, and a passivated metal layer between the first UBM layer and the second UBM layer. The passivated metal layer functions as a barrier layer with respect to solder diffusion.
Public/Granted literature
- US20150243801A1 ELECTRODE PROVIDED WITH UBM STRUCTURE AND METHOD FOR PRODUCING SAME Public/Granted day:2015-08-27
Information query
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