Invention Grant
- Patent Title: Back-surface bridge type contact electrode of crystalline silicon solar battery and preparation method therefor
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Application No.: US15024762Application Date: 2014-07-31
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Publication No.: US10347776B2Publication Date: 2019-07-09
- Inventor: Yifeng Chen , Pierre J. Verlinden , Zhiqiang Feng , Hui Shen , Pietro P. Altermatt
- Applicant: Changzhou Trina Solar Energy Co., Ltd.
- Applicant Address: CN
- Assignee: Trina Solar Co., Ltd.
- Current Assignee: Trina Solar Co., Ltd.
- Current Assignee Address: CN
- Agency: St. Onge Steward Johnston and Reens LLC
- Priority: CN201310440907 20130925
- International Application: PCT/CN2014/083399 WO 20140731
- International Announcement: WO2015/043311 WO 20150402
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/18 ; H01L31/0224 ; H01L31/0216 ; H01L31/028

Abstract:
Disclosed are a back-surface bridge type contact electrode of a crystalline silicon solar battery and a preparation method therefor. The back-surface bridge type contact electrode of a crystalline silicon solar battery includes a local electrode connected to a local back surface field and a back surface electrode which is covered with a back surface passivation film on a contact surface with a silicon wafer substrate, at least one bridge electrode is provided between the local electrode and the back surface electrode, the contact surface of the bridge electrode and the silicon wafer substrate is also covered with the back surface passivation film, the local electrode is connected to the back surface electrode via the bridge electrode, and the back surface passivation film is also provided, besides at the connection region of the bridge electrode, between the local electrode and the back surface electrode.
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