Invention Grant
- Patent Title: Radiation sensor, method of forming the sensor and device including the sensor
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Application No.: US15963744Application Date: 2018-04-26
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Publication No.: US10347784B2Publication Date: 2019-07-09
- Inventor: Kangguo Cheng , Xin Miao , Wenyu Xu , Chen Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/119 ; H01L31/113 ; H01L29/06 ; H01L27/144 ; H01L29/08 ; H01L31/0352 ; H01L31/18 ; H01L21/8234 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor structure formed on a substrate, a gate dielectric formed on a first side of the semiconductor structure, and a dielectric layer formed on a second side of the semiconductor structure.
Public/Granted literature
- US20180240929A1 RADIATION SENSOR, METHOD OF FORMING THE SENSOR AND DEVICE INCLUDING THE SENSOR Public/Granted day:2018-08-23
Information query
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