A light emitting device includes a first conductivity type semiconductor layer including a first conductivity type dopant, an active layer disposed on the first conductivity type semiconductor layer and including a plurality of barrier layers and a plurality of well layers, an electron blocking structure layer disposed on the active layer, and a second conductivity type semiconductor layer disposed on the electron blocking structure layer. The active layer includes a first barrier layer adjacent to the electron blocking structure layer and a first well layer adjacent to the first barrier layer. The plurality of barrier layers include a first conductivity type dopant. The electron blocking structure layer includes a plurality of semiconductor layers including a second conductivity type dopant and AlGaN-based semiconductor. The plurality of semiconductor layers include a first semiconductor layer having a first region adjacent to the first barrier layer. The first region of the first semiconductor layer includes AlGaN-based semiconductor having aluminum composition of 95% or more. A light emitting structure including the active layer and the electron blocking structure layer emits different peak wavelengths.