Invention Grant
- Patent Title: Light emitting diode package structure with large luminous intensity in particular directions and manufacturing method thereof
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Application No.: US15378272Application Date: 2016-12-14
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Publication No.: US10347795B2Publication Date: 2019-07-09
- Inventor: Yu-Hsuan Chen , Ming-Kuei Wu
- Applicant: Everlight Electronics Co., Ltd.
- Applicant Address: TW New Taipei
- Assignee: Everlight Electronics Co., Ltd.
- Current Assignee: Everlight Electronics Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Chen Yoshimura LLP
- Priority: TW104141914A 20151214
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/48 ; H01L33/54 ; H01L33/58

Abstract:
A light emitting diode package structure including a base, a light emitting diode and an encapsulant is provided. The light emitting diode is disposed on a surface of the base and is adapted to generate and emit a light. The encapsulant is disposed on the base and encapsulates the light emitting diode. The encapsulant has a surface parallel to the surface of the base and a plurality of surfaces perpendicular to the surface of the base. The light, after passing through the surface of the encapsulant parallel to the surface of the base, has a first light intensity. The light, after passing through the surfaces of the encapsulant perpendicular to the surface of the base, has a second light intensity. The first light intensity is greater than the second light intensity. In addition, a manufacturing method of a light emitting diode package structure is also provided.
Public/Granted literature
- US20170170368A1 Light Emitting Diode Package Structure And Manufacturing Method Thereof Public/Granted day:2017-06-15
Information query
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