Invention Grant
- Patent Title: Magnetoresistive element and magnetic sensor
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Application No.: US15460779Application Date: 2017-03-16
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Publication No.: US10347823B2Publication Date: 2019-07-09
- Inventor: Hayato Koike
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2016-067817 20160330; JP2016-243045 20161215
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; G01R33/09

Abstract:
A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The average resistivity of a sixth region composed of a first region, a second region, and a fourth region is higher than the average resistivity of a seventh region composed of the second region, a third region, and a fifth region.
Public/Granted literature
- US20170288132A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC SENSOR Public/Granted day:2017-10-05
Information query
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