Invention Grant
- Patent Title: Two-dimensional material plasmonic laser
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Application No.: US15877202Application Date: 2018-01-22
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Publication No.: US10348058B1Publication Date: 2019-07-09
- Inventor: Shang-Jr Gwo , Chun-Yuan Wang
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Stout, Uxa & Buyan, LLP
- Agent Donald E. Stout
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/20 ; G02B6/122 ; G02F1/035 ; H01S5/34 ; H01S5/02 ; H01S5/04

Abstract:
A two-dimensional material plasmonic laser (device) is provided with a surface plasmonic cavity and an atomically thin semiconductor monolayer gain medium disposed on the surface plasmonic cavity. Under optical pumping or electrical pumping, the surface plasmonic cavity provides a laser feedback mechanism by coupling electron-hole pairs confined in the atomically thin semiconductor monolayer gain medium and the surface plasmon modes in the dark-mode surface plasmonic cavity, and a laser light is emitted from the two-dimensional material plasmonic laser.
Public/Granted literature
- US20190229498A1 TWO-DIMENSIONAL MATERIAL PLASMONIC LASER Public/Granted day:2019-07-25
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