Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US15572181Application Date: 2015-08-20
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Publication No.: US10348179B2Publication Date: 2019-07-09
- Inventor: Kosuke Yamaguchi , Tomofumi Tanaka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2015/073316 WO 20150820
- International Announcement: WO2017/029745 WO 20170223
- Main IPC: H02M1/00
- IPC: H02M1/00 ; H01L23/28 ; H02M7/00 ; H01L23/495 ; H01L23/00 ; H02M1/32

Abstract:
An inverter-control element operates with a power-supply potential supplied to an inverter-control-system power-supply terminal to output a signal for controlling an inverter switching element. A brake control element operates with a power-supply potential supplied to a brake-control-system power-supply terminal to output a signal for controlling a brake switching element. A first metal component includes a plurality of protrusions protruding from a sealing resin, is supported by the sealing resin with a portion embedded in the sealing resin, and is electrically connected to each of the inverter-control-system power-supply terminal and the brake-control-system power-supply terminal.
Public/Granted literature
- US20180131262A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2018-05-10
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