Invention Grant
- Patent Title: Semiconductor devices and method for manufacturing semiconductor devices
-
Application No.: US15593394Application Date: 2017-05-12
-
Publication No.: US10355126B2Publication Date: 2019-07-16
- Inventor: Oliver Blank
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016108949 20160513
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/76 ; H01L21/768 ; H01L29/66 ; H01L29/40 ; H01L23/535

Abstract:
A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending from the bottom to a first side of the semiconductor substrate; forming an auxiliary structure on the sidewall and the bottom of the recess and forming a hollow space within the recess; filling the hollow space with a filling material; forming a plug on the first side of the semiconductor substrate to cover the auxiliary structure at least on the sidewall of the recess; forming an opening in the plug to partially expose the auxiliary structure in the recess; removing the auxiliary structure at least partially from the sidewall of the recess to form cavities between the auxiliary structure and the sidewall; and sealing the opening in the plug.
Public/Granted literature
- US09960270B2 Semiconductor devices and method for manufacturing semiconductor devices Public/Granted day:2018-05-01
Information query
IPC分类: