Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US15670187Application Date: 2017-08-07
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Publication No.: US10361161B2Publication Date: 2019-07-23
- Inventor: Jing-Cheng Lin , Chen-Hua Yu , Po-Hao Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48 ; H01L23/28 ; H01L23/31 ; H01L23/00 ; H01L21/683 ; H01L21/56

Abstract:
A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.
Public/Granted literature
- US20170338185A1 Semiconductor Device and Method of Manufacture Public/Granted day:2017-11-23
Information query
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