There is provided a substrate for crystal growth used for a vapor phase growth of a crystal, wherein a plurality of seed crystal substrates made of a group III nitride crystal are arranged in a disc shape, so that their main surfaces are parallel to each other and adjacent lateral surfaces are in contact with each other; and the plurality of seed crystal substrates constituting at least a portion other than a peripheral portion of the substrate for crystal growth respectively has a main surface whose planar shape is a regular hexagon, and a honeycomb pattern obtained by matching the seed crystal substrates has two or more symmetries, when the substrate for crystal growth is rotated once, with an axis passing through a center of a main surface of the substrate for crystal growth and orthogonal to the main surface as a central axis.