Invention Grant
- Patent Title: Ion-sensitive structure and method for producing the same
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Application No.: US15074702Application Date: 2016-03-18
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Publication No.: US10365244B2Publication Date: 2019-07-30
- Inventor: Eberhard Kurth , Christian Kunath , Harald Schenk
- Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Current Assignee Address: DE Munich
- Agency: Perkins Coie LLP
- Agent Michael A. Glenn
- Priority: DE102015204921 20150318
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N27/12 ; G01N27/333
Abstract:
An ion-sensitive structure includes a semiconductor structure and a layer stack disposed on the semiconductor structure having a doped intermediate layer including a doping material and a first metal oxide material. The semiconductor structure is configured to change an electric characteristic based on a contact of the ion-sensitive structure with an electrolyte including ions.
Public/Granted literature
- US20160274057A1 ION-SENSITIVE STRUCTURE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2016-09-22
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