Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15683430Application Date: 2017-08-22
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Publication No.: US10365325B2Publication Date: 2019-07-30
- Inventor: Chiaki Dono
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G01R31/317
- IPC: G01R31/317 ; G11C29/38 ; G11C29/36

Abstract:
Techniques for memory I/O tests using integrated test data paths are provided. In an example, a method for operating input/output data paths of a memory apparatus can include receiving, during a first mode, non-test information at a data terminal of a first channel of the memory apparatus from a memory array of the first channel via a first data path, receiving during a first test mode, first test information at the data terminal of the first channel from a first additional data path coupling the first channel with a second channel of the memory apparatus, and wherein an interface die of the memory apparatus includes the first data path and the additional data path.
Public/Granted literature
- US20190066816A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2019-02-28
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