Provided is a wiring structure for display device which does not generate hillocks even when exposed to high temperatures at levels around 450 to 600° C., has excellent high-temperature heat resistance, keeps electrical resistance (wiring resistance) of the entire wiring structure low, and further has excellent resistance to hydrofluoric acid. This wiring structure for a display device comprises a structure in which are laminated, in order from the substrate side, a first layer of an Al alloy that contains at least one chemical element selected from the group (group X) consisting of Ta, Nb, Re, Zr, W, Mo, V, Hf, Ti, Cr, and Pt and contains at least one rare earth element, and a second layer of an Al alloy nitride, or a nitride of at least one chemical element selected from the group Y consisted of Ti, Mo, Al, Ta, Nb, Re, Zr, W, V, Hf, and Cr.