Invention Grant
- Patent Title: Word line cache mode
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Application No.: US15922290Application Date: 2018-03-15
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Publication No.: US10366733B1Publication Date: 2019-07-30
- Inventor: Gregg D. Wolff
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/12 ; G06F12/0802 ; G11C8/08

Abstract:
Cache mode for word lines where the cache mode utilizes an internal timer for a memory cell to disable connection of a voltage to a transistor of a word line driver of the memory cell before an end of a specified end of period. By early disconnection, the local controls of the memory cell may provide additional time to settle after disconnection of the voltage without interfering with operations (e.g., read, write, activate) of the memory cell, since the internal timer may be programmed to be greater than or equal to a worst case scenario for the operations.
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