Invention Grant
- Patent Title: Resistance variable memory sensing using programming signals
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Application No.: US15635814Application Date: 2017-06-28
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Publication No.: US10366748B2Publication Date: 2019-07-30
- Inventor: Ferdinando Bedeschi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
Apparatuses and methods for sensing a resistance variable memory cell include circuitry to apply a programming signal to a memory cell in the array, the programming signal associated with programming resistance variable memory cells to a particular data state, and detect a change in resistance of the memory cell to determine if a data state of the memory cell changes from an initial data state to a different data state during application of the programming signal.
Public/Granted literature
- US20170301398A1 RESISTANCE VARIABLE MEMORY SENSING USING PROGRAMMING SIGNALS Public/Granted day:2017-10-19
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