Invention Grant
- Patent Title: Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer
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Application No.: US16184984Application Date: 2018-11-08
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Publication No.: US10366884B1Publication Date: 2019-07-30
- Inventor: Jaehyung Lee , Yeul Na , Youngsik Kim
- Applicant: Stratio
- Applicant Address: KR Seoul
- Assignee: STRATIO
- Current Assignee: STRATIO
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306 ; H01L21/3105 ; H01L21/8238 ; H01L23/532 ; H01L27/092
Abstract:
A method for obtaining a semiconductor island includes epitaxially growing a semiconductor structure over a substrate with a mask layer defining a region not covered by the mask layer. The semiconductor structure includes a first portion located adjacent to the mask layer and a second portion located away from the mask layer. The first portion has a first height that is less than a second height of a portion of the mask layer located adjacent to the first portion. The second portion has a third height that is equal to, or greater than, the second height. The method also includes forming a filling layer over at least the first portion; and, subsequently removing at least a portion of the semiconductor structure that is located above the second height. Devices made by this method are also disclosed.
Information query
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