Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15081800Application Date: 2016-03-25
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Publication No.: US10366900B2Publication Date: 2019-07-30
- Inventor: Juing-Yi Wu , Liang-Yao Lee , Tsung-Chieh Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/265 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L21/768
Abstract:
In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the planarization resistance layer. A planarization operation is performed on the second dielectric layer, the planarization resistance layer and the first dielectric layer. The planarization resistance film is made of a material different from the first dielectric layer.
Public/Granted literature
- US20170278717A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-09-28
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