Invention Grant
- Patent Title: Replacement metal gate and inner spacer formation in three dimensional structures using sacrificial silicon germanium
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Application No.: US15941525Application Date: 2018-03-30
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Publication No.: US10367061B1Publication Date: 2019-07-30
- Inventor: Nicolas Loubet
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/08 ; H01L29/78 ; H01L29/423 ; H01L21/3065 ; H01L21/02
Abstract:
A technique relates to a semiconductor device. Stacks are formed each of which including two or more nanosheets separated by a high-k dielectric material. The high-k dielectric material is formed on at least a center portion of the two or more nanosheets in the stacks. A lower spacer material is on a periphery of the two or more nanosheets, and an upper spacer material is on the lower spacer material such that the upper spacer material is above a top one of the two or more nano sheets. Source and drain regions are formed on sides of the stacks.
Information query
IPC分类:
