Invention Grant
- Patent Title: Method of manufacturing light-emitting device
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Application No.: US15854289Application Date: 2017-12-26
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Publication No.: US10367119B2Publication Date: 2019-07-30
- Inventor: Junji Takeichi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Hunton Andrews Kurth LLP
- Priority: JP2016-254287 20161227
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/30 ; H01L33/48 ; H01L33/56 ; H01L33/62 ; H01L33/50 ; H01L33/38

Abstract:
A method of manufacturing a light-emitting device includes: providing a light-emitting element, the light-emitting element comprising a layered semiconductor partially comprising an active layer in a plan view; mounting the light-emitting element on a supporting member; forming a phosphor layer so as to cover the light-emitting element; determining a surplus portion of the phosphor layer; and removing at least a portion of the phosphor layer in a region in the plan view in which the active layer is not disposed.
Public/Granted literature
- US20180182924A1 METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE Public/Granted day:2018-06-28
Information query
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