Invention Grant
- Patent Title: Epitaxial superconducting devices and method of forming same
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Application No.: US16174756Application Date: 2018-10-30
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Publication No.: US10367133B1Publication Date: 2019-07-30
- Inventor: Charles George Tahan
- Applicant: The United States of America as represented by the Director, National Security Agency
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by Director National Security Agency
- Current Assignee: The United States of America, as represented by Director National Security Agency
- Current Assignee Address: US DC Washington
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L39/02 ; H01L39/22 ; H01L39/12 ; H01L39/24
Abstract:
Superconducting regions formed with a crystal provide highly doped regions of acceptor atoms. These superconducting regions are used to provide superconducting devices wherein non-epitaxial interfaces have been eliminated. A method is provided to highly doped regions of a crystal to form the superconducting regions and devices. By forming the superconducting regions within the crystal non-epitaxial interfaces are eliminated.
Information query
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