Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16115864Application Date: 2018-08-29
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Publication No.: US10367501B1Publication Date: 2019-07-30
- Inventor: Kentaro Ikeda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-053571 20180320
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/78 ; H01L29/778 ; H01L29/20

Abstract:
A semiconductor device according to an embodiment includes: a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate; a first capacitor having a first end and a second end, wherein the second end is electrically connected to the second gate; a first diode having a first anode electrically connected between the second end and the second gate, and a first cathode; a gate drive circuit electrically connected to the first gate and the first end; and a switch having a third end and a fourth end, wherein the third end is electrically connected to the first end.
Information query
IPC分类: