Invention Grant
- Patent Title: Silicon refining device
-
Application No.: US14381150Application Date: 2012-03-09
-
Publication No.: US10370253B2Publication Date: 2019-08-06
- Inventor: Yutaka Kishida , Hitoshi Dohnomae
- Applicant: Yutaka Kishida , Hitoshi Dohnomae
- Applicant Address: ES Madrid
- Assignee: Silicio Ferrosolar S.L.
- Current Assignee: Silicio Ferrosolar S.L.
- Current Assignee Address: ES Madrid
- Agency: The Webb Law Firm
- International Application: PCT/JP2012/056113 WO 20120309
- International Announcement: WO2013/132651 WO 20130912
- Main IPC: C01B33/037
- IPC: C01B33/037 ; B01J6/00

Abstract:
Provided is a silicon refining device that is used when industrially producing silicon of high purity by vacuum melting, has a high P removal rate and thus high productivity, and is a practical device cost-wise with a simple and cheap device configuration. This silicon refining device comprises, in a decompression vessel provided with a vacuum pump, a crucible that contains a metal silicon material, a heating device that heats the crucible, and a molten metal surface thermal insulation member that covers the upper portion of silicon molten metal and has an exhaust opening with an opening area that is smaller than the silicon molten metal surface area. The molten metal surface thermal insulation member comprises a laminated insulation material with a multilayer structure in which three or more laminates are laminated at predetermined intervals from each other, and which exhibits a radiant heat insulating function based on the multilayer structure.
Public/Granted literature
- US20150033798A1 SILICON REFINING DEVICE Public/Granted day:2015-02-05
Information query