Invention Grant
- Patent Title: Signal generation circuit and temperature sensor
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Application No.: US15861819Application Date: 2018-01-04
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Publication No.: US10371582B2Publication Date: 2019-08-06
- Inventor: Shigeki Obayashi , Hiroki Shimano , Masataka Minami , Hiroji Ozaki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2013-181430 20130902
- Main IPC: G01K7/01
- IPC: G01K7/01

Abstract:
To provide a signal generation circuit having a short settling time of an output voltage. In a PTAT signal generation circuit, a trimming circuit is coupled between the cathodes of 0-th to K-th diodes and a line of a ground voltage, the anode of the 0-th diode is coupled to a first node, the anodes of the first to the K-th diodes are coupled to a second node via a resistive element, the first node and the second node are set to the same voltage, a first current flowing through the 0-th diode and a second current flowing through the first to the K-th diodes are set to have the same value, and a third current flowing through the trimming circuit is set to have the value 2 times that of each of the first current and the second current.
Public/Granted literature
- US20180128689A1 SIGNAL GENERATION CIRCUIT AND TEMPERATURE SENSOR Public/Granted day:2018-05-10
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