Invention Grant
- Patent Title: Gas sensor and sensor apparatus
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Application No.: US15682867Application Date: 2017-08-22
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Publication No.: US10371658B2Publication Date: 2019-08-06
- Inventor: Satoru Momose , Osamu Tsuboi , Kazuaki Karasawa
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N27/12

Abstract:
A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.
Public/Granted literature
- US20170350839A1 GAS SENSOR AND SENSOR APPARATUS Public/Granted day:2017-12-07
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