Invention Grant
- Patent Title: Magnetic field detection sensor
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Application No.: US15824445Application Date: 2017-11-28
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Publication No.: US10371759B2Publication Date: 2019-08-06
- Inventor: Junya Tanigawa , Hiroki Sugiyama , Makoto Ishii , Takahiro Syouda
- Applicant: Yazaki Corporation
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Yazaki Corporation
- Current Assignee: Yazaki Corporation
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Banner & Witcoff, Ltd.
- Priority: JP2016-232819 20161130
- Main IPC: G01R33/028
- IPC: G01R33/028 ; G01R33/06

Abstract:
A magnetic field detection sensor includes a first magneto-impedance element and a second magneto-impedance element each having a magnetic material, a bias coil applying a bias magnetic field to the magnetic body of the first magneto-impedance element, a high-frequency oscillation circuit supplying high-frequency current to the magnetic bodies of the first magneto-impedance element and the second magneto-impedance element, an AC bias circuit supplying AC bias current to the bias coil, a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field, and a second detection circuit which generates a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field.
Public/Granted literature
- US20180149714A1 Magnetic Field Detection Sensor Public/Granted day:2018-05-31
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