Invention Grant
- Patent Title: Resist underlayer film forming composition containing silicon having ester group
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Application No.: US14439791Application Date: 2013-10-24
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Publication No.: US10372039B2Publication Date: 2019-08-06
- Inventor: Yuta Kanno , Makoto Nakajima , Satoshi Takeda , Hiroyuki Wakayama
- Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-240249 20121031; JP2012-249620 20121113
- International Application: PCT/JP2013/078835 WO 20131024
- International Announcement: WO2014/069329 WO 20140508
- Main IPC: G03F7/075
- IPC: G03F7/075 ; G03F7/09 ; G03F7/36 ; G03F7/30 ; G03F7/32 ; G03F7/40 ; C09D183/06 ; C09D183/08 ; C08G77/28 ; C08G77/14 ; C08G77/00 ; C08G77/26 ; H01L21/02 ; H01L21/033

Abstract:
A resist underlayer film forming composition for lithography for a resist underlayer film usable as a hardmask. A resist underlayer film forming composition for lithography, including: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2), and a content of the hydrolyzable silane of Formula (1) or the hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in all silanes is less than 50% by mole, R1aR2bSi(R3)4−(a+b) Formula (1) R4a1R5b1Si(R6)4−(a1+b1) Formula (2).
Public/Granted literature
- US20150316849A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP Public/Granted day:2015-11-05
Information query
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