Invention Grant
- Patent Title: Cell-level realization of burn after reading for NAND flash
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Application No.: US15379216Application Date: 2016-12-14
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Publication No.: US10373528B2Publication Date: 2019-08-06
- Inventor: Zvonimir Z. Bandic , Robert Eugeniu Mateescu , Minghai Qin , Chao Sun
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Vierra Magen Marcus LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G09C1/00 ; G06F11/10 ; G11C29/52 ; G11C29/04

Abstract:
The present disclosure generally relates to a method of burning a file in a memory device after the file has been read. Once a file has been read, an algorithm uses the memory device to create errors that the error correction code (ECC) cannot decode the error. In creating the error, the entire word line is destroyed physically rather than logically so that retrieving information from that particular word line is no longer possible. In creating the error, adjacent word lines are not affected. The error renders the file burned.
Public/Granted literature
- US20180165993A1 CELL-LEVEL REALIZATION OF BURN AFTER READING FOR NAND FLASH Public/Granted day:2018-06-14
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